View APT50GN120L2DQ2_1169071.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TYPICAL PERFORMANCE CURVES (R)
APT50GN120L2DQ2 APT50GN120L2DQ2G*
APT50GN120L2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
TO-264 Max
G
C
* * * *
* 1200V NPT Field Stop
E
Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
8
All Ratings: TC = 25C unless otherwise specified.
APT50GN120L2DQ2(G) UNIT Volts
1200 30
@ TC = 25C
134 66 150 150A @ 1200V 543 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 400A) Gate Threshold Voltage (VCE = VGE, I C = 2mA, Tj = 25C) MIN TYP MAX Units
1200 5 1.4
2 2
5.8 1.7 1.9
6.5 2.1
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES RGINT
200 TBD 600 4
Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7606
Rev B
10-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GN120L2DQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 50A TJ = 150C, R G = 2.2 7, VGE = 15V, L = 100H,VCE = 1200V VCC = 960V, VGE = 15V, TJ = 125C, R G = 2.2 7 Inductive Switching (25C) VCC = 800V VGE = 15V I C = 50A VGE = 15V MIN TYP MAX UNIT pF V nC
3600 210 170 9.5 315 20 190 150 10 28 27 320 115 TBD 3900 4495 28 27 395 205 TBD 5660 6795 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
s
RG = 2.2 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 50A
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 2.2 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.23 .61 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
10-2005 Rev B
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. 8 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7606
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0
160
15V
APT50GN120L2DQ2(G)
15V
IC, COLLECTOR CURRENT (A)
140
12V 11V
120 100
12V 11V
10V 9V 8V
80 60 40 20 0
10V 9V 8V 7V
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C) 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
0 2 4 6 8 10 12 14 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
I = 50A C T = 25C
J
14 12 10 8 6 4 2 0 0
IC, COLLECTOR CURRENT (A)
VCE = 240V
VCE = 600V
TJ = 125C
TJ = 25C
80 60 40 20 0
VCE = 960V
TJ = -55C
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
50
100 150 200 250 GATE CHARGE (nC)
FIGURE 4, Gate Charge
300
350
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5 2 1.5 1.0 0.5
3 IC = 100A 2.5 2 IC = 50A 1.5 1 0.5 IC = 25A
IC = 100A
IC = 50A
IC = 25A
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
0
8
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 180
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, DC COLLECTOR CURRENT(A)
160 140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
Lead Temperature Limited
1.05
1.00
0.95
050-7606
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
Rev B
10-2005
35 30 25 20 15 10 5 TJ = 25C, TJ =125C
VCE = 800V RG = 2.2 L = 100 H VGE = 15V
500
td (OFF), TURN-OFF DELAY TIME (ns)
APT50GN120L2DQ2(G)
VGE =15V,TJ=125C
td(ON), TURN-ON DELAY TIME (ns)
400
300
VGE =15V,TJ=25C
200
100
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
120 100 tf, FALL TIME (ns) tr, RISE TIME (ns) 80 60 40 20 0
TJ = 25 or 125C,VGE = 15V
RG = 2.2, L = 100H, VCE = 800V
0
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
0
VCE = 800V RG = 2.2 L = 100 H
300 250 200 150 100 50 0
RG = 2.2, L = 100H, VCE = 800V
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
25000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 2.2
G
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
14000 12000 10000 8000 6000 4000 2000 0
V = 800V CE V = +15V GE R = 2.2
G
20000
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
15000
10000
5000
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
50000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE T = 125C
J
0
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
22000
SWITCHING ENERGY LOSSES (J)
Eon2,100A
20000 18000 16000 14000 12000 10000 8000 6000 4000 2000 0
0
V = 800V CE V = +15V GE R = 2.2
G
40000
Eon2,100A
30000
Eoff,100A
20000
Eoff,100A
10-2005
Eon2,50A Eoff,50A Eon2,25A
10000
Eon2,50A Eon2,25A
Rev B
Eoff,50A Eoff,25A
Eoff,25A
050-7606
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
6,000 Cies IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT50GN120L2DQ2(G)
C, CAPACITANCE ( F)
P
1,000 500
C0es 100 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
120 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C) 0.115 Power (watts) 0.115 Case temperature. (C) 0.188F 0.0088F
50
10 5
T = 125C J T = 75C C D = 50 % V = 800V CE R = 2.2
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10 20
050-7606
Rev B
10-2005
APT50GN120L2DQ2(G)
APT40DQ120
10% td(on)
Gate Voltage TJ = 125C Collector Current
V CC
IC
V CE
90% tr
A D.U.T.
10% 5%
Switching Energy
5%
CollectorVoltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST *DRIVER SAME TYPE AS D.U.T.
Gate Voltage TJ = 125C
A
td(off) 90% tf 10%
Switching Energy
CollectorVoltage
V CE 100uH IC V CLAMP A DRIVER* D.U.T. B
0
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7606
Rev B
10-2005
TYPICAL PERFORMANCE CURVES
APT50GN120L2DQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 112C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 50A Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT50GP120L2DQ2(G) UNIT Amps
40 63 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.9 3.67 2.36
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.7 0.40 0.30 0.20 0.10 0 10-5 0.5 0.3 0.1 0.05 10-4
Note:
26 350 570 4 430 2200 9 210 3400 29 -
IF = 40A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 40A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.9
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.0442 C/W 0.00222 J/C
Case temperature (C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7606
0.324 C/W
0.0596 J/C
Rev B
Power (watts)
0.242 C/W
0.00586 J/C
10-2005
120 100 80 60 40 20 0 TJ = 125C TJ = 25C TJ = -55C 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 5000 Qrr, REVERSE RECOVERY CHARGE (nC) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 20A 40A
T = 125C J V = 800V
R
600 trr, REVERSE RECOVERY TIME (ns) 500 400 300 200 100 0
APT50GN120L2DQ2(G)
T = 125C J V = 800V
R
IF, FORWARD CURRENT (A)
80A 40A 20A
TJ = 175C
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 5 0
T = 125C J V = 800V
R
80A
80A
40A
20A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30
Duty cycle = 0.5 T = 175C
J
1.2
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
Qrr trr trr IRRM
1.0 0.8 0.6 0.4 0.2 0.0
Qrr
20 10
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 200
CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
10-2005
50
Rev B
050-7606
10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT50GN120L2DQ2(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circui t
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
TO-264MAX (L2) Package Outline
e1 SAC: Tin, Silver, Copper
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807)
5.79 (.228) 6.20 (.244)
Collector (Cathode)
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7606
5.45 (.215) BSC 2-Plcs.
Rev B
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
Collector (Cathode) Emitter (Anode)
10-2005

▲Up To Search▲

Price & Availability of APT50GN120L2DQ2

	To Download APT50GN120L2DQ2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .